AI is driving technological shifts and breakthrough innovations to address the complexities of semiconductor manufacturing. The aggressive scaling demands of next-generation chips are putting pressure on the metallization process. In this interview, Ross Young, VP of Research at Counterpoint, discusses a generational change in metallization with Dr Kaihan Ashtiani, CVP and GM of ALD/CVD metals at Lam Research. They dig into the advantages of molybdenum and discuss how Lam is enabling the transition from traditional tungsten metallization to molybdenum (moly) via atomic layer deposition (ALD).
Deposition refers to the formation of thin films on semiconductor chips, categorized into dielectric and metal films, to create interconnects that connect billions of devices on a chip, enabling communication.
Dielectric films provide insulation, similar to home wiring, while metal films carry electrical current.
Earlier techniques, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), were more suitable for larger feature dimensions. As dimensions shrink, ALD is used to deposit films one atomic layer at a time, achieving the required precision and uniformity.
Lam was the first to introduce tungsten ALD, with the development spanning more than 20 years.
As semiconductors continue to shrink and performance demands grow, chipmakers are reaching the limit of what is possible with tungsten. Enter moly, which has lower resistance than tungsten in nano-scale wires and does not require a barrier layer. These qualities help boost efficiency and chip speed and reduce the number of process steps required in manufacturing.
In an industry first, Lam has developed techniques to deliver solid precursor materials to the chamber to enable the atomic layer deposition of moly.
NAND is expected to adopt moly first, followed by logic and DRAM. However, Moly’s adoption in NAND is challenging due to the device structure.
Lam has developed the necessary process sequences and hardware features to address these challenges, leveraging decades of expertise.
With a significant lead in moly development over the past decade, the new solution positions Lam to lead the transition in the industry.
AI is pushing the boundaries of what is possible in the race to scale, driving the evolution from traditional scaling to more complex architectures, including 3D structures, integration and heterogeneous designs, to meet demands for increased computational capabilities.
The path forward demands transformative uses of new materials and innovation in tools and equipment to enable the precision required for HVM.
Paving the way for post-GAAFET technologies, such innovations in process and manufacturing will enable seamless transition to next-generation architectures like Complementary FETs (CFETs) and 2D materials. This will be critical for extending Moore’s Law and unlocking new scaling frontiers beyond 2030.
Download the latest whitepaper from Counterpoint and Lam Research for context around chip production processes and Molybdenum.
Related Research
May 14, 2025
May 7, 2025
May 6, 2025