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As the demand for 3D NAND Flash surges, the industry is preparing for a leap to 1,000 word-line layers over the next decade, potentially achieving die densities of 100 Gbit/mm². However, scaling beyond 400 layers introduces significant challenges, such as slow etch rates and vertical profile variability, which demand continuous innovation in etch and deposition technologies.
This whitepaper, authored by Counterpoint Research in partnership with Lam Research, delves into how Lam’s innovations in etching technologies, including their cryogenic dielectric etch technology, are crucial for overcoming these challenges. Lam’s innovations enable better control of high aspect ratio etches, essential for vertical scaling, while also reducing the environmental impact of the etching process.
For those interested in the future of 3D NAND and the technologies driving its growth, this whitepaper offers valuable insights into how the industry is pushing the boundaries of memory density and performance.
To learn more submit the form to receive full whitepaper.
LEAD AUTHORS
Vice President of Research
Senior Analyst
PARTNER
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